ONSEMI FQD8P10TM-F085
Manufacturer No:
FQD8P10TM-F085
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
-100V, -6.6A, 530mΩ, DPAK P-Channel QFET®
Quantity:
In Stock :1185
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQD8P10TM-F085 Information
ONSEMI FQD8P10TM-F085 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQD8P10TM-F085.
- Type
- Parameter
- Vgs(th) Max (V)
- -4
- ID Max (A)
- -6.6
- RDS(on) Max @ VGS = 2.5 V (mΩ)
- -
- RDS(on) Max @ VGS = 4.5 V (mΩ)
- -
- Crss Typ (pF)
- 30
- MSL Temp (°C)
- 260
- Channel Polarity
- P-Channel
- V(BR)DSS Min (V)
- -100
- Qgd Typ @ VGS = 4.5 V (nC)
- 6.4
- Qrr Typ (nC)
- 350
- Type
- Parameter
- Container Qty.
- 2500
- Type
- Low-Medium Voltage
- Qg Typ @ VGS = 4.5 V (nC)
- -
- Wide SOA Mosfets
- 0
- RDS(on) Max @ VGS = 10 V (mΩ)
- 530
- Ciss Typ (pF)
- 360
- Package Type
- DPAK-3 / TO-252-3
- Case Outline
- 369AS
- Package Name
- DPAK
- Coss Typ (pF)
- 120
Download datasheets and manufacturer documentation for ONSEMI FQD8P10TM-F085.
Datasheet:
Package Drawing:
These P-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Application
- Power Train
Feature
- 6.6A, -100V, RDS(on) = 0.53O @VGS = -10 V
- Low gate charge ( typical 12 nC)
- Low Crss ( typical 30 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Qualified to AEC Q101
- RoHS Compliant
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
