Rochester FQD6N60CTM
Manufacturer No:
FQD6N60CTM
Manufacturer:
Rochester
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2 ? @ 2A, 10V ±30V 810pF @ 25V 20nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :2862
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQD6N60CTM Information
Rochester FQD6N60CTM technical specifications, attributes, parameters and parts with similar specifications to Rochester FQD6N60CTM.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Terminal Finish
- MATTE TIN
- Additional Feature
- FAST SWITCHING
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
Download datasheets and manufacturer documentation for Rochester FQD6N60CTM.
FQD6N60CTM Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 810pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 4A.There is a peak drain current of 16A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 600V, it should remain above the 600V level.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FQD6N60CTM Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 16A.
a 600V drain to source voltage (Vdss)
FQD6N60CTM Applications
There are a lot of Rochester Electronics, LLC
FQD6N60CTM applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
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