ONSEMI FQD4P25TM
Manufacturer No:
FQD4P25TM
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 2.1 ? @ 1.55A, 10V ±30V 420pF @ 25V 14nC @ 10V 250V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :5054
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 5 - Sat, Jun 6, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQD4P25TM Information
ONSEMI FQD4P25TM technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQD4P25TM.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- QFET®
- Published
- 2000
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Terminal Finish
- Tin (Sn)
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
Download datasheets and manufacturer documentation for ONSEMI FQD4P25TM.
Datasheets:
FQD4P25TM Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 280 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 420pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 3.1A.Pulsed drain current is maximum rated peak drain current 12.4A.A normal operation of the DS requires keeping the breakdown voltage above 250V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQD4P25TM Features
the avalanche energy rating (Eas) is 280 mJ
based on its rated peak drain current 12.4A.
a 250V drain to source voltage (Vdss)
FQD4P25TM Applications
There are a lot of ON Semiconductor
FQD4P25TM applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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