Rochester FQD4N50TF

Manufacturer No:

FQD4N50TF

Manufacturer:

Rochester

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.7 ? @ 1.3A, 10V ±30V 460pF @ 25V 13nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

Quantity:

In Stock :5581

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Shipped from：HK Warehouse

Expected Shipping：Fri, May 29 - Sat, May 30, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

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SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

FQD4N50TF Information

Rochester FQD4N50TF technical specifications, attributes, parameters and parts with similar specifications to Rochester FQD4N50TF.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
QFET®

Pbfree Code
yes

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Technology
MOSFET (Metal Oxide)

Reach Compliance Code
unknown

Type
Parameter

Pin Count
3

Power Dissipation-Max
2.5W Ta 45W Tc

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
2.7 ? @ 1.3A, 10V

Vgs(th) (Max) @ Id
5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
460pF @ 25V

Current - Continuous Drain (Id) @ 25°C
2.6A Tc

Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V

Drain to Source Voltage (Vdss)
500V

Drive Voltage (Max Rds On,Min Rds On)
10V

Download datasheets and manufacturer documentation for Rochester FQD4N50TF.

Datasheets:

rochesterelectronicsllc-fqd4n50tf-datasheets-4803.pdf

rochesterelectronicsllc-fqd4n50tf-datasheets-4804.pdf

FQD4N50TF Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 460pF @ 25V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.