Rochester FQD2N90TF
Manufacturer No:
FQD2N90TF
Manufacturer:
Rochester
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 7.2 ? @ 850mA, 10V ±30V 500pF @ 25V 15nC @ 10V 900V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :6749
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQD2N90TF Information
Rochester FQD2N90TF technical specifications, attributes, parameters and parts with similar specifications to Rochester FQD2N90TF.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
Download datasheets and manufacturer documentation for Rochester FQD2N90TF.
FQD2N90TF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 170 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 500pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 1.7A.Peak drain current is 6.8A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 900V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQD2N90TF Features
the avalanche energy rating (Eas) is 170 mJ
based on its rated peak drain current 6.8A.
a 900V drain to source voltage (Vdss)
FQD2N90TF Applications
There are a lot of Rochester Electronics, LLC
FQD2N90TF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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