ONSEMI FQD2N60CTM-WS
Manufacturer No:
FQD2N60CTM-WS
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
Power MOSFET, N-Channel, QFET<sup>®</sup>, 600 V, 1.9 A, 4.7 Ω, DPAK
Quantity:
In Stock :3022
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Mon, Jun 15 - Tue, Jun 16, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQD2N60CTM-WS Information
ONSEMI FQD2N60CTM-WS technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQD2N60CTM-WS.
- Type
- Parameter
- ID Max (A)
- 1.9
- Qg Typ @ VGS = 4.5 V (nC)
- -
- Channel Polarity
- N-Channel
- Wide SOA Mosfets
- 0
- Silicon Family
- PowerTrench® T1
- VGS Max (V)
- ±30
- Vgs(th) Max (V)
- 4
- Coss Typ (pF)
- 20
- MSL Temp (°C)
- 260
- Container Type
- REEL
- Type
- Parameter
- Qrr Typ (nC)
- 1000
- Container Qty.
- 2500
- Qgd Typ @ VGS = 4.5 V (nC)
- 4.1
- Package Type
- DPAK-3 / TO-252-3
- Type
- High Voltage
- Package Name
- TO-252-3
- V(BR)DSS Min (V)
- 600
- PD Max (W)
- 44
- RDS(on) Max @ VGS = 2.5 V (mΩ)
- -
- Qg Typ @ VGS = 10 V (nC)
- 8.5
Download datasheets and manufacturer documentation for ONSEMI FQD2N60CTM-WS.
Datasheet:
Package Drawing:
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Application
- Lighting
Feature
- 1.9A, 600V, RDS(on) = 4.7Ω(Max.) @VGS = 10 V, ID = 0.95A
- Low gate charge ( Typ. 8.5nC)
- Low Crss ( Typ. 4.3pF)
- 100% avalanche tested
- RoHS compliant
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
