ONSEMI FQD2N60CTF
Manufacturer No:
FQD2N60CTF
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.7 ? @ 950mA, 10V ±30V 235pF @ 25V 12nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :5914
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Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQD2N60CTF Information
ONSEMI FQD2N60CTF technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQD2N60CTF.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins
- 3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- QFET®
- Published
- 2016
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Voltage - Rated DC
- 600V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 1.9A
- Number of Elements
- 1
- Voltage
- 650V
- Power Dissipation-Max
- 2.5W Ta 44W Tc
- Element Configuration
- Single
- Current
- 18A
- Power Dissipation
- 2.5W
- Turn On Delay Time
- 9 ns
Download datasheets and manufacturer documentation for ONSEMI FQD2N60CTF.
ReachStatement:
FQD2N60CTF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 235pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.9mA.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 24 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
FQD2N60CTF Features
a continuous drain current (ID) of 1.9mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 24 ns
a threshold voltage of 4V
FQD2N60CTF Applications
There are a lot of ON Semiconductor
FQD2N60CTF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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12.28 M
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