Rochester FQD17N08LTF
Manufacturer No:
FQD17N08LTF
Manufacturer:
Rochester
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 100m ? @ 6.45A, 10V ±20V 520pF @ 25V 11.5nC @ 5V 80V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :1406
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQD17N08LTF Information
Rochester FQD17N08LTF technical specifications, attributes, parameters and parts with similar specifications to Rochester FQD17N08LTF.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
Download datasheets and manufacturer documentation for Rochester FQD17N08LTF.
FQD17N08LTF Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called ?Avalanche break down?, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 520pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12.9A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 51.6A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 80V in order to maintain normal operation.Operating this transistor requires a 80V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.
FQD17N08LTF Features
the avalanche energy rating (Eas) is 100 mJ
based on its rated peak drain current 51.6A.
a 80V drain to source voltage (Vdss)
FQD17N08LTF Applications
There are a lot of Rochester Electronics, LLC
FQD17N08LTF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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12.28 M
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