ONSEMI FQD12N20LTM
Manufacturer No:
FQD12N20LTM
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
Power MOSFET, N-Channel, Logic Level, QFET<sup>®</sup>, 200 V, 9.0 A, 280 mΩ, DPAK
Quantity:
In Stock :3282
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 9 - Wed, Jun 10, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQD12N20LTM Information
ONSEMI FQD12N20LTM technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQD12N20LTM.
- Type
- Parameter
- Silicon Family
- PowerTrench® T1
- OPN in older Technology
- 0
- Qg Typ @ VGS = 4.5 V (nC)
- -
- MSL Type
- 1
- Container Qty.
- 2500
- Vgs(th) Max (V)
- 2
- Type
- Low-Medium Voltage
- Wide SOA Mosfets
- 0
- Configuration
- Single
- Qrr Typ (nC)
- 560
- Type
- Parameter
- Package Name
- DPAK
- RDS(on) Max @ VGS = 10 V (mΩ)
- 280
- Package Type
- DPAK-3 / TO-252-3
- V(BR)DSS Min (V)
- 200
- ID Max (A)
- 9
- Qgd Typ @ VGS = 4.5 V (nC)
- 7.6
- Coss Typ (pF)
- 120
- Case Outline
- 369AS
- MSL Temp (°C)
- 260
- Gate Level
- Logic
Download datasheets and manufacturer documentation for ONSEMI FQD12N20LTM.
Datasheet:
Package Drawing:
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Application
- LED TV
- CRT/RPTV
- AC-DC Merchant Power Supply - Servers & Workstations
- Workstation
- Server & Mainframe
Feature
- 9A, 200V, RDS(on) = 280mΩ(Max.) @VGS = 10 V, ID = 4.5A
- Low gate charge ( Typ. 16nC)
- Low Crss ( Typ. 17pF)
- 100% avalanche tested
- Low level gate drive requirement allowing direct oprationfrom logic drivers
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
