Rochester FQB6N25TM
Manufacturer No:
FQB6N25TM
Manufacturer:
Rochester
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1 ? @ 2.75A, 10V ±30V 300pF @ 25V 8.5nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :1840
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
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Step2：Desiccant Protection
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Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQB6N25TM Information
Rochester FQB6N25TM technical specifications, attributes, parameters and parts with similar specifications to Rochester FQB6N25TM.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
Download datasheets and manufacturer documentation for Rochester FQB6N25TM.
FQB6N25TM Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 75 mJ.A device's maximal input capacitance is 300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 5.5A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 22A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQB6N25TM Features
the avalanche energy rating (Eas) is 75 mJ
based on its rated peak drain current 22A.
a 250V drain to source voltage (Vdss)
FQB6N25TM Applications
There are a lot of Rochester Electronics, LLC
FQB6N25TM applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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12.28 M
Listed Part Number
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