Rochester FQB4N20TM
Manufacturer No:
FQB4N20TM
Manufacturer:
Rochester
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.4 ? @ 1.8A, 10V ±30V 220pF @ 25V 6.5nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :7029
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQB4N20TM Information
Rochester FQB4N20TM technical specifications, attributes, parameters and parts with similar specifications to Rochester FQB4N20TM.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- QFET®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
Download datasheets and manufacturer documentation for Rochester FQB4N20TM.
FQB4N20TM Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 52 mJ.A device's maximum input capacitance is 220pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 3.6A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 14.4A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 200V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FQB4N20TM Features
the avalanche energy rating (Eas) is 52 mJ
based on its rated peak drain current 14.4A.
a 200V drain to source voltage (Vdss)
FQB4N20TM Applications
There are a lot of Rochester Electronics, LLC
FQB4N20TM applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
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3,000+
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4.9 M
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15,000+
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