Rochester FQB16N25CTM
Manufacturer No:
FQB16N25CTM
Manufacturer:
Rochester
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 270m ? @ 7.8A, 10V ±30V 1.08pF @ 25V 53.5nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :1967
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQB16N25CTM Information
Rochester FQB16N25CTM technical specifications, attributes, parameters and parts with similar specifications to Rochester FQB16N25CTM.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- QFET®
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Type
- Parameter
- Terminal Finish
- NOT SPECIFIED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Reach Compliance Code
- unknown
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
- Qualification Status
- COMMERCIAL
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
Download datasheets and manufacturer documentation for Rochester FQB16N25CTM.
FQB16N25CTM Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 410 mJ.A device's maximal input capacitance is 1.08pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 15.6A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 62.4A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQB16N25CTM Features
the avalanche energy rating (Eas) is 410 mJ
based on its rated peak drain current 62.4A.
a 250V drain to source voltage (Vdss)
FQB16N25CTM Applications
There are a lot of Rochester Electronics, LLC
FQB16N25CTM applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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