ONSEMI FQB12N60CTM
Manufacturer No:
FQB12N60CTM
Manufacturer:
ONSEMI
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 650mOhm @ 6A, 10V ±30V 2290pF @ 25V 63nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :8558
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FQB12N60CTM Information
ONSEMI FQB12N60CTM technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FQB12N60CTM.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins
- 3
- Supplier Device Package
- D2PAK (TO-263AB)
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- QFET®
- Published
- 2007
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Voltage - Rated DC
- 600V
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 12A
- Power Dissipation-Max
- 3.13W Ta 225W Tc
- Element Configuration
- Single
- Power Dissipation
- 225W
- FET Type
- N-Channel
Download datasheets and manufacturer documentation for ONSEMI FQB12N60CTM.
Datasheets:
ReachStatement:
FQB12N60CTM Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2290pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [155 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 650mOhm.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQB12N60CTM Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 155 ns
single MOSFETs transistor is 650mOhm
a 600V drain to source voltage (Vdss)
FQB12N60CTM Applications
There are a lot of ON Semiconductor
FQB12N60CTM applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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