DIODES FMMT723TA

Manufacturer No:

FMMT723TA

Manufacturer:

DIODES

Package:

TO-236-3, SC-59, SOT-23-3

Description:

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

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FMMT723TA information

DIODES FMMT723TA technical specifications, attributes, parameters and parts with similar specifications to DIODES FMMT723TA.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Number of Pins
3

Weight
7.994566mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2006

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
MATTE TIN

Voltage - Rated DC
-100V

Max Power Dissipation
625mW

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Current Rating
-1A

Frequency
200MHz

Time@Peak Reflow Temperature-Max (s)
40

Base Part Number
FMMT723

Number of Elements
1

Element Configuration
Single

Power Dissipation
625mW

Transistor Application
SWITCHING

Gain Bandwidth Product
200MHz

Polarity/Channel Type
PNP

Transistor Type
PNP

Collector Emitter Voltage (VCEO)
-100V

Max Collector Current
-1A

DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 500mA 10V

Current - Collector Cutoff (Max)
100nA

Vce Saturation (Max) @ Ib, Ic
330mV @ 150mA, 1A

Collector Emitter Breakdown Voltage
-160V

Current - Collector (Ic) (Max)
1A

Transition Frequency
200MHz

Collector Emitter Saturation Voltage
-210mV

Max Breakdown Voltage
100V

Collector Base Voltage (VCBO)
-100V

Emitter Base Voltage (VEBO)
-7V

hFE Min
250

Max Junction Temperature (Tj)
150°C

Continuous Collector Current
-1A

Height
1.1mm

Download datasheets and manufacturer documentation for DIODES FMMT723TA.

FMMT723TA Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 500mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -210mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 330mV @ 150mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.The emitter base voltage can be kept at -7V for high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as -1A volts at Single BJT transistors maximum.

FMMT723TA Features

the DC current gain for this device is 250 @ 500mA 10V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 330mV @ 150mA, 1A
the emitter base voltage is kept at -7V
the current rating of this device is -1A
a transition frequency of 200MHz

FMMT723TA Applications

There are a lot of Diodes Incorporated
FMMT723TA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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