ONSEMI FJP5200OTU
Manufacturer No:
FJP5200OTU
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
NPN -50°C~150°C TJ 5?A ICBO 1 Elements TO-220-3 Tube Through Hole
Quantity:
In Stock :8389
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FJP5200OTU Information
ONSEMI FJP5200OTU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FJP5200OTU.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Weight
- 1.8g
- Operating Temperature
- -50°C~150°C TJ
- Packaging
- Tube
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Power Dissipation
- 80W
- Type
- Parameter
- Frequency
- 30MHz
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 100W
- Power - Max
- 80W
- Gain Bandwidth Product
- 30MHz
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 3V
- Max Collector Current
- 17A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 1A 5V
Download datasheets and manufacturer documentation for ONSEMI FJP5200OTU.
Datasheets:
ReachStatement:
FJP5200OTU Overview
In this device, the DC current gain is 80 @ 1A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 800mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 17A volts at Single BJT transistors maximum.
FJP5200OTU Features
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
FJP5200OTU Applications
There are a lot of ON Semiconductor
FJP5200OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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