ONSEMI FJP13009H2
ONSEMI FJP13009H2

ONSEMI FJP13009H2

Manufacturer No:

FJP13009H2

Manufacturer:

ONSEMI

Package:

TO-220-3

Description:

NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

Price not displayed? Please send an RFQ, and we will respond immediately.

FJP13009H2 information

ONSEMI FJP13009H2 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FJP13009H2.

  • Type
  • Parameter
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-220-3
  • Surface Mount
  • NO
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tube
  • JESD-609 Code
  • e3
  • Pbfree Code
  • yes
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin (Sn)
  • HTS Code
  • 8541.29.00.95
  • Subcategory
  • Other Transistors
  • Terminal Position
  • SINGLE
  • Peak Reflow Temperature (Cel)
  • NOT SPECIFIED
  • Reach Compliance Code
  • compliant
  • Time@Peak Reflow Temperature-Max (s)
  • NOT SPECIFIED
  • Base Part Number
  • FJP13009
  • JESD-30 Code
  • R-PSFM-T3
  • Qualification Status
  • Not Qualified
  • Number of Elements
  • 1
  • Configuration
  • SINGLE
  • Transistor Application
  • SWITCHING
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 15 @ 5A 5V
  • JEDEC-95 Code
  • TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
  • 3V @ 3A, 12A
  • Voltage - Collector Emitter Breakdown (Max)
  • 400V
  • Current - Collector (Ic) (Max)
  • 12A
  • Transition Frequency
  • 4MHz
  • Frequency - Transition
  • 4MHz
  • Power Dissipation-Max (Abs)
  • 100W

Download datasheets and manufacturer documentation for ONSEMI FJP13009H2.

FJP13009H2 Overview


In this device, the DC current gain is 15 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 3A, 12A.4MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 400V.

FJP13009H2 Features


the DC current gain for this device is 15 @ 5A 5V
the vce saturation(Max) is 3V @ 3A, 12A
a transition frequency of 4MHz


FJP13009H2 Applications


There are a lot of ON Semiconductor
FJP13009H2 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

Step6:Packaging Box

Step6:Packaging Box

SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.