ONSEMI FJN5471PWD
Manufacturer No:
FJN5471PWD
Manufacturer:
ONSEMI
Package:
TO-226-3, TO-92-3 (TO-226AA)
Description:
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
Quantity:
In Stock :1502
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FJN5471PWD Information
ONSEMI FJN5471PWD technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FJN5471PWD.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Power - Max
- 750mW
- Transistor Type
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 700 @ 500mA 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Type
- Parameter
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 100mA, 3A
- Voltage - Collector Emitter Breakdown (Max)
- 20V
- Current - Collector (Ic) (Max)
- 5A
- Frequency - Transition
- 150MHz
Download datasheets and manufacturer documentation for ONSEMI FJN5471PWD.
FJN5471PWD Overview
This device has a DC current gain of 700 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 100mA, 3A means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 20VV - Maximum voltage.
FJN5471PWD Features
the DC current gain for this device is 700 @ 500mA 2V
the vce saturation(Max) is 500mV @ 100mA, 3A
FJN5471PWD Applications
There are a lot of ON Semiconductor
FJN5471PWD applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)