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FGH40N6S2D Information
ONSEMI FGH40N6S2D technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FGH40N6S2D.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Supplier Device Package
- TO-247-3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Published
- 2002
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Input Type
- Standard
- Power - Max
- 290W
- Type
- Parameter
- Reverse Recovery Time
- 48ns
- Voltage - Collector Emitter Breakdown (Max)
- 600V
- Current - Collector (Ic) (Max)
- 75A
- Test Condition
- 390V, 20A, 3Ohm, 15V
- Vce(on) (Max) @ Vge, Ic
- 2.7V @ 15V, 20A
- Gate Charge
- 35nC
- Current - Collector Pulsed (Icm)
- 180A
- Td (on/off) @ 25°C
- 8ns/35ns
- Switching Energy
- 115?J (on), 195?J (off)
Download datasheets and manufacturer documentation for ONSEMI FGH40N6S2D.
Datasheets:
FGH40N6S2D Description
The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.
FGH40N6S2D Features
? 100kHz Operation at 390V, 24A
? 200kHZ Operation at 390V, 18A
? 600V Switching SOA Capability
? Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC
? Low Gate Charge . . . . . . . . . 35nC at VGE = 15V
? Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
? UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ
? Low Conduction Loss
FGH40N6S2D Applications
? Power Factor Correction (PFC) circuits
? Full bridge topologies
? Half bridge topologies
? Push-Pull circuits
? Uninterruptible power supplies
? Zero voltage and zero current switching circuits
FGH40N6S2D Relevant information
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