INFINEON FF900R12IE4VPBOSA1

Manufacturer No:

FF900R12IE4VPBOSA1

Manufacturer:

INFINEON

Package:

Module

Description:

IGBT MOD 1200V 900A 20MW

Quantity:

In Stock :2876

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Thu, May 14 - Fri, May 15, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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MEANS OF PAYMENT

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RFQ (REQUEST FOR QUOTATIONS)

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

FF900R12IE4VPBOSA1 Information

INFINEON FF900R12IE4VPBOSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON FF900R12IE4VPBOSA1.

Type
Parameter

Mounting Type
Chassis Mount

Package / Case
Module

Surface Mount
NO

Transistor Element Material
SILICON

Current-Collector (Ic) (Max)
900A

Number of Elements
2

Operating Temperature
-40°C~150°C

Series
PrimePack™2

Published
2002

Part Status
Active

Type
Parameter

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
10

ECCN Code
EAR99

Additional Feature
UL APPROVED

Terminal Position
UPPER

Terminal Form
UNSPECIFIED

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

JESD-30 Code
R-PUFM-X10

Configuration
Half Bridge

Download datasheets and manufacturer documentation for INFINEON FF900R12IE4VPBOSA1.

FF900R12IE4VPBOSA1 Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO?247?4L package that provides significant reduction in Eon Losses compared to standard TO?247?3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage.