

INFINEON FF225R12ME4BOSA1
Manufacturer No:
FF225R12ME4BOSA1
Manufacturer:
Package:
Module
Description:
IGBT MODULE VCES 1200V 225A
Quantity:


In Stock :4494
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Step6:Packaging Box
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FF225R12ME4BOSA1 Information
INFINEON FF225R12ME4BOSA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON FF225R12ME4BOSA1.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Current-Collector (Ic) (Max)
- 320A
- Number of Elements
- 2
- Operating Temperature
- -40°C~150°C
- Series
- EconoDUAL™ 3
- Published
- 2002
- Type
- Parameter
- Pbfree Code
- no
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Number of Terminations
- 11
- ECCN Code
- EAR99
- Terminal Position
- UPPER
- Terminal Form
- UNSPECIFIED
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 11
Download datasheets and manufacturer documentation for INFINEON FF225R12ME4BOSA1.
ConflictMineralStatement:
FF225R12ME4BOSA1 Description
FF225R12ME4BOSA1 is a single IGBT with a break down voltage of 1200V from Infineon Technologies. FF225R12ME4BOSA1 operates between -40°C~150°C, and its Current - Collector (Ic) (Max) is 320A. The FF225R12ME4BOSA1 has 3 pins and it is available in Module packaging way. FF225R12ME4BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FF225R12ME4BOSA1 Features
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
IGBT Type: Trench Field Stop
Input Capacitance (Cies) @ Vce: 13nF @ 25V
Voltage - Collector Emitter Breakdown (Max): 1200V
Operating Temperature: -40°C~150°C
FF225R12ME4BOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
FF225R12ME4BOSA1 Relevant information
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