ONSEMI FDV303N
ONSEMI FDV303N

ONSEMI FDV303N

Manufacturer No:

FDV303N

Manufacturer:

ONSEMI

Package:

TO-236-3, SC-59, SOT-23-3

Description:

N-Channel Digital FET 25V, 0.68A, 0.45Ω

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DHL

In Stock :4696

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Shipped from：HK Warehouse
Expected Shipping：Sun, May 24 - Mon, May 25, 2026
Date Code：Within 2 Years

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User Guide

Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

PURCHASE

Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

FDV303N Information

ONSEMI FDV303N technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDV303N.

  • Type
  • Parameter
  • Type
  • Small Signal
  • Wide SOA Mosfets
  • 0
  • Package Type
  • SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
  • Container Qty.
  • 3000
  • Ciss Typ (pF)
  • 50
  • Case Outline
  • 318
  • MSL Temp (°C)
  • 260
  • Container Type
  • REEL
  • Package Name
  • SOT-23
  • Gate Level
  • Logic
  • Type
  • Parameter
  • Id Max (A)
  • 0.68
  • Qg Typ @ VGS = 4.5 V (nC)
  • 2.3
  • Qg Typ @ VGS = 10 V (nC)
  • -
  • Qgd Typ @ VGS = 4.5 V (nC)
  • 0.45
  • Vgs(th) Max (V)
  • 1
  • PD Max (W)
  • 0.35
  • Channel Polarity
  • N-Channel
  • Silicon Family
  • PowerTrench® T1
  • RDS(on) Max @ VGS = 10 V (mΩ)
  • -
  • Qrr Typ (nC)
  • -

Download datasheets and manufacturer documentation for ONSEMI FDV303N.

Datasheet:

Package Drawing:

These N-Channel enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Application

  • This product is general usage and suitable for many different applications.

Feature

  • 25 V, 0.68 A continuous, 2 A Peak
  • RDS(ON) = 0.45 Ω @ VGS= 4.5 V
  • RDS(ON) = 0.6 Ω @ VGS= 2.7 V
  • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V
  • Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
  • Compact industry standard SOT-23 surface mount package
  • Alternative to TN0200T and TN0201T

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