ONSEMI FDV303N-F169
ONSEMI FDV303N-F169

ONSEMI FDV303N-F169

Manufacturer No:

FDV303N-F169

Manufacturer:

ONSEMI

Package:

Description:

N-Channel Digital FET 25V, 0.68A, 0.45Ω

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In Stock :8995

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Shipped from：HK Warehouse
Expected Shipping：Sat, May 23 - Sun, May 24, 2026
Date Code：Within 2 Years

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

FDV303N-F169 Information

ONSEMI FDV303N-F169 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDV303N-F169.

  • Type
  • Parameter
  • Qgd Typ @ VGS = 4.5 V (nC)
  • 0.45
  • Gate Level
  • Logic
  • Id Max (A)
  • 0.68
  • Qg Typ @ VGS = 4.5 V (nC)
  • 2.3
  • Qg Typ @ VGS = 10 V (nC)
  • -
  • Vgs(th) Max (V)
  • 8
  • PD Max (W)
  • 0.35
  • Crss Typ (pF)
  • 9
  • Channel Polarity
  • N-Channel
  • Silicon Family
  • PowerTrench® T1
  • Type
  • Parameter
  • RDS(on) Max @ VGS = 10 V (mΩ)
  • -
  • Qrr Typ (nC)
  • -
  • VGS Max (V)
  • 8
  • RDS(on) Max @ VGS = 2.5 V (mΩ)
  • 600
  • RDS(on) Max @ VGS = 4.5 V (mΩ)
  • 450
  • Coss Typ (pF)
  • 28
  • MSL Type
  • 1
  • Configuration
  • Single
  • OPN in older Technology
  • 0
  • V(BR)DSS Min (V)
  • 25

Download datasheets and manufacturer documentation for ONSEMI FDV303N-F169.

Datasheet:

Package Drawing:

These N-Channel enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Application

  • This product is general usage and suitable for many different applications.

Feature

  • 25 V, 0.68 A continuous, 2 A Peak
  • RDS(ON) = 0.45 Ω @ VGS= 4.5 V
  • RDS(ON) = 0.6 Ω @ VGS= 2.7 V
  • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V
  • Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
  • Compact industry standard SOT-23 surface mount package
  • Alternative to TN0200T and TN0201T

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