Rochester FDU8770
Manufacturer No:
FDU8770
Manufacturer:
Rochester
Package:
TO-251-3 Short Leads, IPak, TO-251AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 4m ? @ 35A, 10V ±20V 3.72pF @ 13V 73nC @ 10V 25V TO-251-3 Short Leads, IPak, TO-251AA
Quantity:
In Stock :5147
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDU8770 Information
Rochester FDU8770 technical specifications, attributes, parameters and parts with similar specifications to Rochester FDU8770.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- PowerTrench®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- JESD-30 Code
- R-PSIP-T3
Download datasheets and manufacturer documentation for Rochester FDU8770.
FDU8770 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 113 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3.72pF @ 13V.The drain current is the maximum continuous current this device can conduct, which is 35A.Pulsed drain current is maximum rated peak drain current 407A.A normal operation of the DS requires keeping the breakdown voltage above 25V.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
FDU8770 Features
the avalanche energy rating (Eas) is 113 mJ
based on its rated peak drain current 407A.
a 25V drain to source voltage (Vdss)
FDU8770 Applications
There are a lot of Rochester Electronics, LLC
FDU8770 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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