ONSEMI FDSS2407

ONSEMI FDSS2407

Manufacturer No:

FDSS2407

Manufacturer:

ONSEMI

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

N-Channel Logic Level Gate Dual MOSFET 60V, 3.3A, 132mΩ

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In Stock :3188

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Shipped from：HK Warehouse
Expected Shipping：Tue, May 19 - Wed, May 20, 2026
Date Code：Within 2 Years

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

FDSS2407 Information

ONSEMI FDSS2407 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDSS2407.

  • Type
  • Parameter
  • Package Type
  • SOIC-8
  • Case Outline
  • 751EB
  • MSL Type
  • 1
  • Type
  • Small Signal
  • Configuration
  • Dual
  • Qg Typ @ VGS = 10 V (nC)
  • 3.3
  • Qrr Typ (nC)
  • 60
  • RDS(on) Max @ VGS = 10 V (mΩ)
  • Q1: 110.0, Q2: 110.0
  • Vgs(th) Max (V)
  • 3
  • Ciss Typ (pF)
  • NA
  • Type
  • Parameter
  • Id Max (A)
  • 3.3
  • RDS(on) Max @ VGS = 4.5 V (mΩ)
  • -
  • Qgd Typ @ VGS = 4.5 V (nC)
  • 2
  • Container Type
  • REEL
  • Package Name
  • NA
  • V(BR)DSS Min (V)
  • 62
  • Wide SOA Mosfets
  • 0
  • Crss Typ (pF)
  • 16
  • Container Qty.
  • 2500
  • Silicon Family
  • PowerTrench® T1

Download datasheets and manufacturer documentation for ONSEMI FDSS2407.

Datasheet:

Package Drawing:

This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are:1. A drain to source voltage feedback signal and2. A gate drive disable control function that previously required external discrete circuitry.Including these functions within the MOSFET saves printed circuit board space. The drain to source voltage feedback function provides a 5V level output whenever the drain to source voltage is above 62V. This can monitor the time an inductive load takes to dissipate its stored energy. Multiple feedback signals can be wired “OR’d” together to a single input of the monitoring circuit.The gate disable function allows the device to be turned off independent of the drive signal on the gate. This function permits a second control circuit the ability to deactivate the load if necessary. It can also be wired “OR’d” allowing multiple devices to be controlled by a single open collector / drain control transistor.

Application

  • Power Train
  • Automotive Injector Driver
  • Solenoid Driver

Feature

  • 62V, 132m, 5V Logic Level Gate Dual MOSFET in SO-8
  • 5V Logic Level feedback signal of the drain to sourcevoltage
    Multiple devices can be wired "OR'd" to a single monitoring circuit input
  • Gate Drive Disable Input
    Multiple devices controllable bya single disable transistor
  • Qualified to AEC Q101

FDSS2407 Relevant information

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