ONSEMI FDS6673BZ-F085

ONSEMI FDS6673BZ-F085

Manufacturer No:

FDS6673BZ-F085

Manufacturer:

ONSEMI

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

P-Channel PowerTrench<sup>®</sup> MOSFET -30V, -14.5A, 7.8mΩ

DHL
DHL

In Stock :1370

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Shipped from：HK Warehouse
Expected Shipping：Sat, May 9 - Sun, May 10, 2026
Date Code：Within 2 Years

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Aichiplink operates certified in-house inspection and testing facilities to ensure all electronic components meet internationally recognized quality and compliance standards. Our quality management system is verified through ISO 9001 certification and industry-standard inspection procedures.

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Provide target prices and acceptable alternatives, if any, to speed up the quotation process.

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

FDS6673BZ-F085 Information

ONSEMI FDS6673BZ-F085 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDS6673BZ-F085.

  • Type
  • Parameter
  • RDS(on) Max @ VGS = 10 V (mΩ)
  • 7.8
  • Ciss Typ (pF)
  • NA
  • MSL Temp (°C)
  • 260
  • Container Type
  • REEL
  • Qgd Typ @ VGS = 4.5 V (nC)
  • -
  • RDS(on) Max @ VGS = 4.5 V (mΩ)
  • -
  • Qg Typ @ VGS = 10 V (nC)
  • 88
  • Type
  • Small Signal
  • Id Max (A)
  • -14.5
  • PD Max (W)
  • 2.5
  • Type
  • Parameter
  • RDS(on) Max @ VGS = 2.5 V (mΩ)
  • NA
  • Qg Typ @ VGS = 4.5 V (nC)
  • 25
  • Case Outline
  • 751EB
  • MSL Type
  • 1
  • OPN in older Technology
  • 0
  • Vgs(th) Max (V)
  • -3
  • Silicon Family
  • PowerTrench® T1
  • Configuration
  • Single
  • Coss Typ (pF)
  • -
  • Crss Typ (pF)
  • -

Download datasheets and manufacturer documentation for ONSEMI FDS6673BZ-F085.

Datasheet:

Package Drawing:

This P-Channel MOSFET is produced using an advanced Power Trench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Application

  • Infotainment
  • Portable Navigation
  • Other
  • Power Train
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive

Feature

  • Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
  • Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
  • Extended VGS range (-25V) for battery applications
  • HBM ESD protection level of 6.5kV typical (note 3)
  • High performance trench technology for extremely lowrDS(on)
  • High power and current handling capability
  • RoHS compliant
  • Qualified to AEC Q101

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