
ONSEMI FDMS8570SDC
Manufacturer No:
FDMS8570SDC
Manufacturer:
Package:
8-PowerTDFN
Description:
N-Channel PowerTrench<sup>®</sup> SyncFET™ 25V, 60A, 2.8mΩ
Quantity:


In Stock :8412
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User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDMS8570SDC Information
ONSEMI FDMS8570SDC technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDMS8570SDC.
- Type
- Parameter
- Channel Polarity
- N-Channel
- Configuration
- Single
- RDS(on) Max @ VGS = 2.5 V (mΩ)
- -
- MSL Type
- 1
- Vgs (V)
- 12
- PD Max (W)
- 59
- Qrr Typ (nC)
- -
- Crss Typ (pF)
- -
- Silicon Family
- PowerTrench® T1
- Type
- Low-Medium Voltage
- Type
- Parameter
- V(BR)DSS Min (V)
- 25
- Case Outline
- 483BK
- Container Type
- REEL
- Ciss Typ (pF)
- 2825
- Package Type
- PQFN-8
- MSL Temp (°C)
- 260
- Wide SOA Mosfets
- 0
- Qg Typ @ VGS = 10 V (nC)
- 22
- Qgd Typ @ VGS = 4.5 V (nC)
- -
- Coss Typ (pF)
- -
Download datasheets and manufacturer documentation for ONSEMI FDMS8570SDC.
Datasheet:
Package Drawing:
This N-Channel SyncFET™ is produced using onsemi Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
Application
- Server
Feature
- Dual Cool™ PQFN package
- Maximum RDS(on) = 2.8 mΩ at VGS = 10 V, ID = 28 A
- Maximum RDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 25 A
- High-Performance Technology for Extremely Low RDS(on)
- SyncFET™ Schottky Body Diode
- RoHS Compliant
FDMS8570SDC Relevant information
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