ONSEMI FDMS3622S
Manufacturer No:
FDMS3622S
Manufacturer:
ONSEMI
Package:
8-PowerTDFN
Description:
Asymmetric Dual N-Channel PowerTrench<sup>®</sup> Power Stage MOSFET, 25V
Quantity:
In Stock :7809
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 5 - Sat, Jun 6, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDMS3622S Information
ONSEMI FDMS3622S technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDMS3622S.
- Type
- Parameter
- Type
- Low-Medium Voltage
- Vgs(th) Max (V)
- Q1: 2.0, Q2: 2.2
- Qg Typ @ VGS = 4.5 V (nC)
- 19
- RDS(on) Max @ VGS = 10 V (mΩ)
- Q1: 5.0, Q2: 1.4
- Coss Typ (pF)
- -
- Channel Polarity
- N-Channel
- Silicon Family
- PowerTrench® T1
- Qgd Typ @ VGS = 4.5 V (nC)
- -
- Vgs (V)
- 12
- ID Max (A)
- Q1: 17.5, Q2: 34.0
- Type
- Parameter
- RDS(on) Max @ VGS = 2.5 V (mΩ)
- -
- Crss Typ (pF)
- -
- Package Type
- PQFN-8
- MSL Temp (°C)
- 260
- Wide SOA Mosfets
- 0
- OPN in older Technology
- 0
- Qg Typ @ VGS = 10 V (nC)
- 40
- Case Outline
- 483AJ
- Package Name
- Power 56 (SO-8FL)
- Gate Level
- Logic
Download datasheets and manufacturer documentation for ONSEMI FDMS3622S.
Datasheet:
Package Drawing:
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
Application
- Server
- Computing
- General Purpose Point of Load
- Notebook VCORE
Feature
- Q1: N-Channel
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A
Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A - Q2: N-Channel
Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 34 A
Max rDS(on) = 1.6 mΩ at VGS = 4.5 V, ID = 32 A - Low inductance packaging shortens rise/fall times, resulting in lower switching losses
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS Compliant
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
