ONSEMI FDME1024NZT
Manufacturer No:
FDME1024NZT
Manufacturer:
ONSEMI
Package:
6-UFDFN Exposed Pad
Description:
Dual N-Channel Power Trench<SUP>®</SUP> MOSFET 20V, 3.8A, 66mΩ
Quantity:
In Stock :4520
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Sun, Jun 7 - Mon, Jun 8, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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User Guide
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDME1024NZT Information
ONSEMI FDME1024NZT technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDME1024NZT.
- Type
- Parameter
- Package Name
- Power 22
- Qrr Typ (nC)
- -
- Case Outline
- 517DW
- Wide SOA Mosfets
- 0
- OPN in older Technology
- 0
- RDS(on) Max @ VGS = 10 V (mΩ)
- -
- ID Max (A)
- 3.8
- RDS(on) Max @ VGS = 2.5 V (mΩ)
- Q1=Q2=86
- Channel Polarity
- N-Channel
- Configuration
- Dual
- Type
- Parameter
- PD Max (W)
- 1.4
- Gate Level
- Logic
- Qg Typ @ VGS = 4.5 V (nC)
- 20
- Qgd Typ @ VGS = 4.5 V (nC)
- -
- Coss Typ (pF)
- -
- Crss Typ (pF)
- -
- Vgs (V)
- 8
- Container Type
- REEL
- V(BR)DSS Min (V)
- 20
- Qg Typ @ VGS = 10 V (nC)
- 3
Download datasheets and manufacturer documentation for ONSEMI FDME1024NZT.
Datasheet:
Package Drawing:
This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
Application
- This product is general usage and suitable for many different applications.
Feature
- Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
- Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
- Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
- Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A
- Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
- Free from halogenated compounds and antimony oxides
- HBM ESD protection level > 1600V (Note 3)
- RoHS Compliant
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
