Rochester FDI33N25TU
Manufacturer No:
FDI33N25TU
Manufacturer:
Rochester
Package:
TO-262-3 Long Leads, I2Pak, TO-262AA
Description:
MOSFET (Metal Oxide) N-Channel Tube 94m ? @ 16.5A, 10V ±30V 2.135pF @ 25V 48nC @ 10V 250V TO-262-3 Long Leads, I2Pak, TO-262AA
Quantity:
In Stock :4589
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDI33N25TU Information
Rochester FDI33N25TU technical specifications, attributes, parameters and parts with similar specifications to Rochester FDI33N25TU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- UniFET?
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Additional Feature
- FAST SWITCHING, AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT APPLICABLE
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
Download datasheets and manufacturer documentation for Rochester FDI33N25TU.
FDI33N25TU Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 918 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.135pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 33A.Pulsed drain current is maximum rated peak drain current 132A.A normal operation of the DS requires keeping the breakdown voltage above 250V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FDI33N25TU Features
the avalanche energy rating (Eas) is 918 mJ
based on its rated peak drain current 132A.
a 250V drain to source voltage (Vdss)
FDI33N25TU Applications
There are a lot of Rochester Electronics, LLC
FDI33N25TU applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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