ONSEMI FDH45N50F-F133
Manufacturer No:
FDH45N50F-F133
Manufacturer:
ONSEMI
Package:
TO-247-3
Description:
Power MOSFET, N-Channel, UniFET<sup>TM</sup>, FRFET<sup>®</sup>, 500 V, 45 A, 120 mΩ, TO-247
Quantity:
In Stock :9843
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 12 - Sat, Jun 13, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step4：Individual Package
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDH45N50F-F133 Information
ONSEMI FDH45N50F-F133 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDH45N50F-F133.
- Type
- Parameter
- Qg Typ @ VGS = 10 V (nC)
- 105
- Package Type
- TO-247-3
- VGS Max (V)
- ±30
- Wide SOA Mosfets
- 0
- Configuration
- Single
- OPN in older Technology
- 0
- Container Qty.
- 450
- Gate Level
- Standard
- V(BR)DSS Min (V)
- 500
- ID Max (A)
- 45
- Type
- Parameter
- RDS(on) Max @ VGS = 4.5 V (mΩ)
- -
- Qgd Typ @ VGS = 4.5 V (nC)
- 45
- Qrr Typ (nC)
- 640
- MSL Type
- NA
- RDS(on) Max @ VGS = 10 V (mΩ)
- 120
- Case Outline
- 340CK
- PD Max (W)
- 625
- RDS(on) Max @ VGS = 2.5 V (mΩ)
- -
- Crss Typ (pF)
- 26
- MSL Temp (°C)
- 0
Download datasheets and manufacturer documentation for ONSEMI FDH45N50F-F133.
Datasheet:
Package Drawing:
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Application
- This product is general usage and suitable for many different applications.
Feature
- RDS(on) = 120mΩ ( Max.)@ VGS = 10V, ID = 22.5A
- Low gate charge ( Typ. 105nC)
- Low Crss ( Typ. 62pF)
- 100% avalanche tested
- Improved dv/dt capability
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
