Rochester FDFMA2P853T
Manufacturer No:
FDFMA2P853T
Manufacturer:
Rochester
Package:
6-UDFN Exposed Pad
Description:
MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 120m ? @ 3A, 4.5V ±8V 435pF @ 10V 6nC @ 4.5V 20V 6-UDFN Exposed Pad
Quantity:
In Stock :7886
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Step1：Prepare product
Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDFMA2P853T Information
Rochester FDFMA2P853T technical specifications, attributes, parameters and parts with similar specifications to Rochester FDFMA2P853T.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- PowerTrench®
- JESD-609 Code
- e4
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 6
- Terminal Finish
- NICKEL PALLADIUM GOLD
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- C BEND
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 30
- Pin Count
- 6
- JESD-30 Code
- S-PDSO-C6
Download datasheets and manufacturer documentation for Rochester FDFMA2P853T.
FDFMA2P853T Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 435pF @ 10V.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 6A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20V in order to maintain normal operation.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
FDFMA2P853T Features
based on its rated peak drain current 6A.
a 20V drain to source voltage (Vdss)
FDFMA2P853T Applications
There are a lot of Rochester Electronics, LLC
FDFMA2P853T applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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