Rochester FDD8444L
Manufacturer No:
FDD8444L
Manufacturer:
Rochester
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.2m ? @ 50A, 10V ±20V 5.53pF @ 25V 60nC @ 5V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :5066
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDD8444L Information
Rochester FDD8444L technical specifications, attributes, parameters and parts with similar specifications to Rochester FDD8444L.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- PowerTrench®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
Download datasheets and manufacturer documentation for Rochester FDD8444L.
FDD8444L Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 295 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5.53pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 16A.Normal operation requires that the DS breakdown voltage remain above 40V.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDD8444L Features
the avalanche energy rating (Eas) is 295 mJ
a 40V drain to source voltage (Vdss)
FDD8444L Applications
There are a lot of Rochester Electronics, LLC
FDD8444L applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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