
ONSEMI FDD6612A
Manufacturer No:
FDD6612A
Manufacturer:
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
N-Channel PowerTrench<sup>®</sup> MOSFET, 30V, 30A, 20mΩ
Quantity:


In Stock :4629
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User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDD6612A Information
ONSEMI FDD6612A technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDD6612A.
- Type
- Parameter
- OPN in older Technology
- 0
- Id Max (A)
- 30
- Container Qty.
- 2500
- Gate Level
- Logic
- Wide SOA Mosfets
- 0
- Qg Typ @ VGS = 10 V (nC)
- 6.7
- Ciss Typ (pF)
- 660
- V(BR)DSS Min (V)
- 30
- Coss Typ (pF)
- -
- MSL Type
- 1
- Type
- Parameter
- VGS Max (V)
- 20
- PD Max (W)
- 36
- Package Type
- DPAK-3 / TO-252-3
- MSL Temp (°C)
- 260
- Configuration
- Single
- Silicon Family
- PowerTrench® T1
- Package Name
- TO-252-3
- Vgs(th) Max (V)
- 3
- RDS(on) Max @ VGS = 4.5 V (mΩ)
- 28
- Case Outline
- 369AS
Download datasheets and manufacturer documentation for ONSEMI FDD6612A.
Datasheet:
Package Drawing:
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) , fast switching speed and extremely low RDS(ON) in a small package.
Application
- This product is general usage and suitable for many different applications.
Feature
- 30 A, 30 V
- RDS(on) = 20 mΩ @ VGS = 10 V
- RDS(on) = 28 mΩ @ VGS = 4.5 V
- Low gate charge (9nC typical)
- Fast switching
- High performance trench technology for extremelylow RDS(on)
FDD6612A Relevant information
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