ONSEMI FDD5N50FTF_WS
Manufacturer No:
FDD5N50FTF_WS
Manufacturer:
ONSEMI
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.55Ohm @ 1.75A, 10V ±30V 650pF @ 25V 15nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :4139
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Shipping & Availability
Fast worldwide shipping via DHL, FedEx, UPS, and EMS.
Shipped from：HK Warehouse
Expected Shipping：Wed, Jun 10 - Thu, Jun 11, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.
Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDD5N50FTF_WS Information
ONSEMI FDD5N50FTF_WS technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDD5N50FTF_WS.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package
- D-Pak
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- UniFET?
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 40W Tc
- Type
- Parameter
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 1.55Ohm @ 1.75A, 10V
- Vgs(th) (Max) @ Id
- 5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 650pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 3.5A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 10V
- Drain to Source Voltage (Vdss)
- 500V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±30V
Download datasheets and manufacturer documentation for ONSEMI FDD5N50FTF_WS.
FDD5N50FTF_WS Overview
The maximum input capacitance of this device is 650pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
FDD5N50FTF_WS Features
a 500V drain to source voltage (Vdss)
FDD5N50FTF_WS Applications
There are a lot of ON Semiconductor
FDD5N50FTF_WS applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
