Rochester FDD5810
Manufacturer No:
FDD5810
Manufacturer:
Rochester
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 22m ? @ 32A, 10V ±20V 1.89pF @ 25V 34nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity:
In Stock :6461
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDD5810 Information
Rochester FDD5810 technical specifications, attributes, parameters and parts with similar specifications to Rochester FDD5810.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 2
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- JESD-30 Code
- R-PSSO-G2
- Qualification Status
- COMMERCIAL
Download datasheets and manufacturer documentation for Rochester FDD5810.
FDD5810 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.89pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [7.7A] according to its drain current.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
FDD5810 Features
the avalanche energy rating (Eas) is 45 mJ
a 60V drain to source voltage (Vdss)
FDD5810 Applications
There are a lot of Rochester Electronics, LLC
FDD5810 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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