ONSEMI FDC6321C

ONSEMI FDC6321C

Manufacturer No:

FDC6321C

Manufacturer:

ONSEMI

Package:

SOT-23-6 Thin, TSOT-23-6

Description:

Dual N & P Channel Digital FET 25V

DHL
DHL

In Stock :5619

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Shipped from：HK Warehouse
Expected Shipping：Thu, May 7 - Fri, May 8, 2026
Date Code：Within 2 Years

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

FDC6321C Information

ONSEMI FDC6321C technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FDC6321C.

  • Type
  • Parameter
  • Id Max (A)
  • N: 0.68 , P: -0.46
  • Channel Polarity
  • Complementary
  • V(BR)DSS Min (V)
  • ±25
  • PD Max (W)
  • 0.9
  • Qg Typ @ VGS = 10 V (nC)
  • 1.1
  • Qgd Typ @ VGS = 4.5 V (nC)
  • -
  • Container Qty.
  • 3000
  • OPN in older Technology
  • 0
  • Vgs(th) Max (V)
  • 1.5
  • Qg Typ @ VGS = 4.5 V (nC)
  • -
  • Type
  • Parameter
  • Crss Typ (pF)
  • -
  • Silicon Family
  • PowerTrench® T1
  • RDS(on) Max @ VGS = 4.5 V (mΩ)
  • N: 450, P:1100
  • Coss Typ (pF)
  • -
  • MSL Type
  • 1
  • Type
  • Small Signal
  • Configuration
  • Dual
  • MSL Temp (°C)
  • 260
  • Gate Level
  • Logic
  • Package Type
  • TSOT-23-6

Download datasheets and manufacturer documentation for ONSEMI FDC6321C.

Package Drawing:

Datasheet:

These dual N & P Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.

Application

  • This product is general usage and suitable for many different applications.

Feature

  • N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 Ω @ VGS= 4.5 V
  • P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 Ω @ VGS= -4.5 V.
  • Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.0V.
  • Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
  • Replace multiple dual NPN & PNP digital transistors.

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