Rochester FDB2570
Manufacturer No:
FDB2570
Manufacturer:
Rochester
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 80m ? @ 11A, 10V ±20V 1.911pF @ 75V 56nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Quantity:
In Stock :6490
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDB2570 Information
Rochester FDB2570 technical specifications, attributes, parameters and parts with similar specifications to Rochester FDB2570.
- Type
- Parameter
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -65°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- PowerTrench®
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- Terminal Finish
- MATTE TIN
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Reach Compliance Code
- unknown
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 4
Download datasheets and manufacturer documentation for Rochester FDB2570.
FDB2570 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 375 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1.911pF @ 75V maximal input capacitance.A device can conduct a maximum continuous current of [22A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 50A.The DS breakdown voltage should be maintained above 150V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
FDB2570 Features
the avalanche energy rating (Eas) is 375 mJ
based on its rated peak drain current 50A.
a 150V drain to source voltage (Vdss)
FDB2570 Applications
There are a lot of Rochester Electronics, LLC
FDB2570 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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