Rochester FDAF75N28
Manufacturer No:
FDAF75N28
Manufacturer:
Rochester
Package:
TO-3P-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 41m ? @ 23A, 10V ±30V 6.7pF @ 25V 144nC @ 10V 280V TO-3P-3 Full Pack
Quantity:
In Stock :5489
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDAF75N28 Information
Rochester FDAF75N28 technical specifications, attributes, parameters and parts with similar specifications to Rochester FDAF75N28.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3 Full Pack
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- UniFET?
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Additional Feature
- FAST SWITCHING
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)
- NOT APPLICABLE
- Pin Count
- 3
- JESD-30 Code
- R-XSFM-T3
Download datasheets and manufacturer documentation for Rochester FDAF75N28.
FDAF75N28 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3080 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6.7pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 46A.There is a peak drain current of 184A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 280V, it should remain above the 280V level.The transistor must receive a 280V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FDAF75N28 Features
the avalanche energy rating (Eas) is 3080 mJ
based on its rated peak drain current 184A.
a 280V drain to source voltage (Vdss)
FDAF75N28 Applications
There are a lot of Rochester Electronics, LLC
FDAF75N28 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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