Rochester FDAF69N25
Manufacturer No:
FDAF69N25
Manufacturer:
Rochester
Package:
TO-3P-3 Full Pack
Description:
MOSFET (Metal Oxide) N-Channel Tube 41m ? @ 17A, 10V ±30V 4.64pF @ 25V 100nC @ 10V 250V TO-3P-3 Full Pack
Quantity:
In Stock :2928
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
FDAF69N25 Information
Rochester FDAF69N25 technical specifications, attributes, parameters and parts with similar specifications to Rochester FDAF69N25.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3 Full Pack
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- UniFET?
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Obsolete
- Type
- Parameter
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Finish
- MATTE TIN
- Additional Feature
- FAST SWITCHING
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)
- NOT APPLICABLE
- Pin Count
- 3
- JESD-30 Code
- R-PSFM-T3
Download datasheets and manufacturer documentation for Rochester FDAF69N25.
FDAF69N25 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1894 mJ.A device's maximal input capacitance is 4.64pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 34A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 136A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FDAF69N25 Features
the avalanche energy rating (Eas) is 1894 mJ
based on its rated peak drain current 136A.
a 250V drain to source voltage (Vdss)
FDAF69N25 Applications
There are a lot of Rochester Electronics, LLC
FDAF69N25 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
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