ONSEMI FCP110N65F
Manufacturer No:
FCP110N65F
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
Power MOSFET, N-Channel, SUPERFET<sup>® </sup>II, FRFET<sup>®</sup>, 650V, 35A, 110mΩ, TO-220
Quantity:
In Stock :4836
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FCP110N65F Information
ONSEMI FCP110N65F technical specifications, attributes, parameters and parts with similar specifications to ONSEMI FCP110N65F.
- Type
- Parameter
- Wide SOA Mosfets
- 0
- ID Max (A)
- 35
- PD Max (W)
- 357
- Qgd Typ @ VGS = 4.5 V (nC)
- 43
- Package Name
- TO-220
- Vgs(th) Max (V)
- 5
- Qg Typ @ VGS = 10 V (nC)
- 98
- Crss Typ (pF)
- 0.65
- Configuration
- Single
- VGS Max (V)
- DC: ±20, AC: ±30
- Type
- Parameter
- MSL Type
- NA
- Gate Level
- Standard
- Qg Typ @ VGS = 4.5 V (nC)
- -
- Ciss Typ (pF)
- 3680
- Container Type
- TUBE
- Channel Polarity
- N-Channel
- Silicon Family
- PowerTrench® T1
- RDS(on) Max @ VGS = 10 V (mΩ)
- 110
- RDS(on) Max @ VGS = 2.5 V (mΩ)
- -
- Package Type
- TO-220-3
Download datasheets and manufacturer documentation for ONSEMI FCP110N65F.
Datasheet:
Package Drawing:
SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Application
- AC-DC Power Supplies
End Product
- LCD / LED / PDP TV
- Solar Inverters
- Telecom / Server Power Supplies
Feature
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 96 mΩ (Typ.)
- Ultra Low Gate Charge (Typ. Qg = 98 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 308 pF)
- 100% Avalanche Tested
- RoHS Compliant
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12.28 M
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