ONSEMI EC4401C-TL
Manufacturer No:
EC4401C-TL
Manufacturer:
ONSEMI
Package:
4-UFDFN
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.7Ohm @ 80mA, 4V ±10V 7pF @ 10V 1.58nC @ 10V 30V 4-UFDFN
Quantity:
In Stock :3384
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Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 13 - Sun, Jun 14, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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EC4401C-TL Information
ONSEMI EC4401C-TL technical specifications, attributes, parameters and parts with similar specifications to ONSEMI EC4401C-TL.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 4-UFDFN
- Number of Pins
- 4
- Supplier Device Package
- 4-ECSP1008
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2011
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Technology
- MOSFET (Metal Oxide)
- Power Dissipation-Max
- 150mW Ta
- Element Configuration
- Single
- Power Dissipation
- 150mW
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 3.7Ohm @ 80mA, 4V
- Input Capacitance (Ciss) (Max) @ Vds
- 7pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 150mA Ta
Download datasheets and manufacturer documentation for ONSEMI EC4401C-TL.
Datasheets:
ReachStatement:
EC4401C-TL Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 150mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 3.7Ohm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 10V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (1.5V 4V), this device helps reduce its overall power consumption.
EC4401C-TL Features
a continuous drain current (ID) of 150mA
a drain-to-source breakdown voltage of 30V voltage
single MOSFETs transistor is 3.7Ohm
a 30V drain to source voltage (Vdss)
EC4401C-TL Applications
There are a lot of ON Semiconductor
EC4401C-TL applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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