DIODES DSS5240TQ-7
DIODES DSS5240TQ-7

DIODES DSS5240TQ-7

Manufacturer No:

DSS5240TQ-7

Manufacturer:

DIODES

Package:

TO-236-3, SC-59, SOT-23-3

Description:

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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DSS5240TQ-7 information

DIODES DSS5240TQ-7 technical specifications, attributes, parameters and parts with similar specifications to DIODES DSS5240TQ-7.

  • Type
  • Parameter
  • Factory Lead Time
  • 13 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-236-3, SC-59, SOT-23-3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2015
  • JESD-609 Code
  • e3
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Matte Tin (Sn)
  • Additional Feature
  • HIGH RELIABILITY
  • Max Power Dissipation
  • 730mW
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
  • NOT SPECIFIED
  • Reference Standard
  • AEC-Q101
  • JESD-30 Code
  • R-PDSO-G3
  • Number of Elements
  • 1
  • Configuration
  • SINGLE
  • Transistor Application
  • SWITCHING
  • Polarity/Channel Type
  • PNP
  • Transistor Type
  • PNP
  • Collector Emitter Voltage (VCEO)
  • 350mV
  • Max Collector Current
  • 2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 210 @ 1A 2V
  • Current - Collector Cutoff (Max)
  • 100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 350mV @ 200mA, 2A
  • Collector Emitter Breakdown Voltage
  • 40V
  • Transition Frequency
  • 100MHz
  • Max Breakdown Voltage
  • 40V
  • Frequency - Transition
  • 100MHz
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for DIODES DSS5240TQ-7.

Environmental Information:

DSS5240TQ-7 Overview


In this device, the DC current gain is 210 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 200mA, 2A.100MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 2A volts.

DSS5240TQ-7 Features


the DC current gain for this device is 210 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
a transition frequency of 100MHz


DSS5240TQ-7 Applications


There are a lot of Diodes Incorporated
DSS5240TQ-7 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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