Texas Instruments DRV8334RGZR
Manufacturer No:
DRV8334RGZR
Manufacturer:
Texas Instruments
Package:
Description:
60-V 1000-mA to 2000-mA 3-phase gate driver with accurate current sensing
Quantity:
In Stock :7205
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Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DRV8334RGZR Information
Texas Instruments DRV8334RGZR technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments DRV8334RGZR.
- Type
- Parameter
- Rating
- Catalog
- Architecture
- Gate driver
- Control interface
- 1xPWM, 3xPWM, 6xPWM, SPI
- Gate drive (A)
- 1
- Vs (min) (V)
- 4.5
- Vs ABS (max) (V)
- 65
- Features
- Current sense Amplifier, Phase Comparators, SPI/I2C, Watchdog timer
- Operating temperature range (°C)
- -40 to 125
- Package
- HTQFP (PHP)
- Pins
- 48
- Type
- Parameter
- Size
- 81 mm² 9 x 9
- Package
- VQFN (RGZ)
- Pins
- 48
- Size
- 49 mm² 7 x 7
- REACH Status
- —
- RoHS Status
Download datasheets and manufacturer documentation for Texas Instruments DRV8334RGZR.
Data sheet:
Application brief:
EVM User's guide:
The DRV8334 is an integrated smart gate driver for three-phase BLDC applications. The device provides three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8334 generates the correct gate drive voltages using an integrated bootstrap diode and a GVDD charge pump. The Smart Gate Drive architecture supports configurable peak gate drive current from 0.8mA up to 1A source and 2A sink. The DRV8334 can operate from a single power supply with a wide input range of 4.5 to 60V. A trickle charge pump enables 100% PWM duty cycle control, and provides overdrive supply voltage for external switches.
The DRV8334 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurement.
A wide range of diagnostics and protection features integrated in the DRV8334 enable a robust motor drive system design and help eliminate the needs of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
- Three phase half-bridge gate driver
- Drives six N-channel MOSFETs (NMOS)
- 4.5 to 60V wide operating voltage range
- Bootstrap architecture for high-side gate driver
- Strong GVDD charge pump to support up to 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
- Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external protection circuits
- Smart Gate Drive architecture
- 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
- Three-step dynamic drive current control
- Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
- Low-side Current Sense Amplifier
- Sub-1mV low input offset across temperature
- 9-level adjustable gain
- SPI-based detailed configuration and diagnostics
- DRVOFF pin to disable driver independently
- High voltage wake up pin (nSLEEP)
- 6x, 3x, 1x, and Independent PWM Modes
- Supports 3.3V, and 5V Logic Inputs
- Integrated protection features
- Battery and power supply voltage monitors
- Phase feedback comparator
- MOSFET VDS and Rsense over current monitors
- MOSFET VGS gate fault monitors
- Device thermal warning and shutdown
- Fault condition indicator pin
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12.28 M
Listed Part Number
3,000+
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4.9 M
In-stock SKU
15,000+
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