DIODES DMTH61M8SPSQ-13

Manufacturer No:

DMTH61M8SPSQ-13

Manufacturer:

DIODES

Package:

8-PowerTDFN

Description:

MOSFET (Metal Oxide) N-Channel 1.6mOhm @ 30A, 10V ±20V 8306 pF @ 30 V 130.6 nC @ 10 V 60 V 8-PowerTDFN

Quantity:

In Stock :1505

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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SHIPPING COST

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMTH61M8SPSQ-13 Information

DIODES DMTH61M8SPSQ-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMTH61M8SPSQ-13.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-PowerTDFN

Supplier Device Package
PowerDI5060-8 (Type K)

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
3.2W (Ta), 167W (Tc)

Series
Automotive, AEC-Q101

Operating Temperature
-55°C ~ 175°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
1.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
8306 pF @ 30 V

Current - Continuous Drain (Id) @ 25°C
215A (Tc)

Gate Charge (Qg) (Max) @ Vgs
130.6 nC @ 10 V

Drain to Source Voltage (Vdss)
60 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for DIODES DMTH61M8SPSQ-13.

DMTH61M8SPSQ-13 Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8306 pF @ 30 V maximal input capacitance.To operate this transistor, you will need a 60 V drain to source voltage (Vdss).