DIODES DMTH47M2SPSW-13

Manufacturer No:

DMTH47M2SPSW-13

Manufacturer:

DIODES

Package:

8-PowerTDFN

Description:

MOSFET (Metal Oxide) N-Channel 7.5mOhm @ 20A, 10V ±20V 897 pF @ 20 V 12.1 nC @ 10 V 40 V 8-PowerTDFN

Quantity:

In Stock :9517

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Shipping & Availability

Fast worldwide shipping via DHL, FedEx, UPS, and EMS.

Shipped from：HK Warehouse

Expected Shipping：Wed, Jun 3 - Thu, Jun 4, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMTH47M2SPSW-13 Information

DIODES DMTH47M2SPSW-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMTH47M2SPSW-13.

Type
Parameter

Mounting Type
Surface Mount, Wettable Flank

Package / Case
8-PowerTDFN

Supplier Device Package
PowerDI5060-8 (Type UX)

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
3.3W (Ta), 68W (Tc)

Operating Temperature
-55°C ~ 175°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
7.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
897 pF @ 20 V

Current - Continuous Drain (Id) @ 25°C
73A (Tc)

Gate Charge (Qg) (Max) @ Vgs
12.1 nC @ 10 V

Drain to Source Voltage (Vdss)
40 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for DIODES DMTH47M2SPSW-13.

DMTH47M2SPSW-13 Overview

A device's maximum input capacitance is 897 pF @ 20 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 40 V drain to source voltage (Vdss).