DIODES DMTH31M7LPSQ-13

Manufacturer No:

DMTH31M7LPSQ-13

Manufacturer:

DIODES

Package:

8-PowerTDFN

Description:

MOSFET (Metal Oxide) N-Channel 1.7mOhm @ 20A, 10V ±16V 5741 pF @ 15 V 90 nC @ 10 V 30 V 8-PowerTDFN

Quantity:

In Stock :8890

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Shipped from：HK Warehouse

Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMTH31M7LPSQ-13 Information

DIODES DMTH31M7LPSQ-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMTH31M7LPSQ-13.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-PowerTDFN

Supplier Device Package
PowerDI5060-8

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
1.3W (Ta), 113W (Tc)

Series
Automotive, AEC-Q101

Operating Temperature
-55°C ~ 175°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
1.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id
3V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
5741 pF @ 15 V

Current - Continuous Drain (Id) @ 25°C
30A (Ta), 100A (Tc)

Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V

Drain to Source Voltage (Vdss)
30 V

Vgs (Max)
±16V

Download datasheets and manufacturer documentation for DIODES DMTH31M7LPSQ-13.

DMTH31M7LPSQ-13 Overview

The maximum input capacitance of this device is 5741 pF @ 15 V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30 V in order to operate.