DIODES DMTH10H1M7STLWQ-13

Manufacturer No:

DMTH10H1M7STLWQ-13

Manufacturer:

DIODES

Package:

8-PowerSFN

Description:

MOSFET (Metal Oxide) N-Channel 2mOhm @ 30A, 10V ±20V 9871 pF @ 50 V 147 nC @ 10 V 100 V 8-PowerSFN

Quantity:

In Stock :7512

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMTH10H1M7STLWQ-13 Information

DIODES DMTH10H1M7STLWQ-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMTH10H1M7STLWQ-13.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-PowerSFN

Supplier Device Package
POWERDI1012-8

Mfr
Diodes Incorporated

Package
Digi-Reel?

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
6W (Ta), 250W (Tc)

Base Product Number
DMTH10

Operating Temperature
-55°C ~ 175°C (TJ)

Type
Parameter

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
9871 pF @ 50 V

Current - Continuous Drain (Id) @ 25°C
250A (Tc)

Gate Charge (Qg) (Max) @ Vgs
147 nC @ 10 V

Drain to Source Voltage (Vdss)
100 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for DIODES DMTH10H1M7STLWQ-13.

DMTH10H1M7STLWQ-13 Overview

A device's maximum input capacitance is 9871 pF @ 50 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 100 V drain to source voltage (Vdss).