DIODES DMTH10H009SPSQ-13

Manufacturer No:

DMTH10H009SPSQ-13

Manufacturer:

DIODES

Package:

8-PowerTDFN

Description:

MOSFET (Metal Oxide) N-Channel 8.9mOhm @ 20A, 10V ±20V 2085 pF @ 50 V 30 nC @ 10 V 100 V 8-PowerTDFN

Quantity:

In Stock :4250

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Shipped from：HK Warehouse

Expected Shipping：Sun, Jun 14 - Mon, Jun 15, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMTH10H009SPSQ-13 Information

DIODES DMTH10H009SPSQ-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMTH10H009SPSQ-13.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-PowerTDFN

Supplier Device Package
PowerDI5060-8

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
10V

Power Dissipation (Max)
1.6W (Ta), 100W (Tc)

Base Product Number
DMTH10

Series
Automotive, AEC-Q101

Type
Parameter

Operating Temperature
-55°C ~ 175°C (TJ)

Technology
MOSFET (Metal Oxide)

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
8.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
2085 pF @ 50 V

Current - Continuous Drain (Id) @ 25°C
14A (Ta), 86A (Tc)

Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V

Drain to Source Voltage (Vdss)
100 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for DIODES DMTH10H009SPSQ-13.

DMTH10H009SPSQ-13 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2085 pF @ 50 V.In order to operate this transistor, a voltage of 100 V is needed from the drain to the source (Vdss).