DIODES DMTH10H005SCT
Manufacturer No:
DMTH10H005SCT
Manufacturer:
DIODES
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 5m ? @ 13A, 10V ±20V 8474pF @ 50V 111.7nC @ 10V 100V TO-220-3
Quantity:
In Stock :8927
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 5 - Sat, Jun 6, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
DMTH10H005SCT Information
DIODES DMTH10H005SCT technical specifications, attributes, parameters and parts with similar specifications to DIODES DMTH10H005SCT.
- Type
- Parameter
- Factory Lead Time
- 19 Weeks
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- JESD-609 Code
- e3
- Part Status
- Active
- Number of Terminations
- 3
- Type
- Parameter
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
Download datasheets and manufacturer documentation for DIODES DMTH10H005SCT.
Environmental Information:
DMTH10H005SCT Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 542 mJ.A device's maximum input capacitance is 8474pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 140A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 400A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
DMTH10H005SCT Features
the avalanche energy rating (Eas) is 542 mJ
based on its rated peak drain current 400A.
a 100V drain to source voltage (Vdss)
DMTH10H005SCT Applications
There are a lot of Diodes Incorporated
DMTH10H005SCT applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
