DIODES DMT67M8LSS-13

Manufacturer No:

DMT67M8LSS-13

Manufacturer:

DIODES

Package:

8-SOIC (0.154", 3.90mm Width)

Description:

MOSFET (Metal Oxide) N-Channel 6.6mOhm @ 16.5A, 10V ±20V 2130 pF @ 30 V 37.5 nC @ 10 V 60 V 8-SOIC (0.154", 3.90mm Width)

Quantity:

In Stock :8130

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 28 - Fri, May 29, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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User Guide

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PURCHASE

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IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

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Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

DMT67M8LSS-13 Information

DIODES DMT67M8LSS-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES DMT67M8LSS-13.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
8-SOIC (0.154", 3.90mm Width)

Supplier Device Package
8-SO

Mfr
Diodes Incorporated

Package
Tape & Reel (TR)

Product Status
Active

Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V

Power Dissipation (Max)
1.4W (Ta)

Operating Temperature
-55°C ~ 150°C (TJ)

Technology
MOSFET (Metal Oxide)

Type
Parameter

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
6.6mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id
3V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
2130 pF @ 30 V

Current - Continuous Drain (Id) @ 25°C
12A (Ta)

Gate Charge (Qg) (Max) @ Vgs
37.5 nC @ 10 V

Drain to Source Voltage (Vdss)
60 V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for DIODES DMT67M8LSS-13.

DMT67M8LSS-13 Overview

A device's maximum input capacitance is 2130 pF @ 30 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 60 V drain to source voltage (Vdss).